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| NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts, N-Channel TO-220 and D2PAK http://onsemi.com This Logic Level Vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. Features 75 AMPERES, 30 VOLTS RDS(on) = 8 mW N-Channel D * * * * * * * * * * * Pb-Free Packages are Available Ultra-Low RDS(on), Single Base, Advanced Technology SPICE Parameters Available Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatures High Avalanche Energy Specified ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0 G S MARKING DIAGRAMS 4 Drain 4 Typical Applications Power Supplies Inductive Loads PWM Motor Controls Replaces MTP75N03HDL and MTB75N03HDL in Many Applications 1 TO-220 CASE 221A STYLE 5 1 Gate 75N 03L09 AYWW 2 3 3 Source 2 Drain 4 Drain 4 2 1 3 D2PAK CASE 418AA STYLE 2 75N03L09 AYWW 2 1 3 Drain Gate Source 75N03L09 A Y WW = Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2004 1 August, 2004 - Rev. 6 Publication Order Number: NTP75N03L09/D NTP75N03L09, NTB75N03L09 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 MW) Gate-to-Source Voltage - Continuous Non-repetitive (tp 10 ms) Drain Current - Continuous @ TC = 25C - Continuous @ TC = 100C - Single Pulse (tp 10 ms) Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C (Note 1) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting T J = 25C (VDD = 38 Vdc, VGS = 10 Vdc, L = 1 mH, IL(pk) = 55 A, VDS = 40 Vdc) Thermal Resistance - Junction-to-Case - Junction-to-Ambient - Junction-to-Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGB VGS VGS ID ID IDM PD Value 30 30 20 24 75 59 225 125 1.0 2.5 -55 to 150 1500 Unit Vdc Vdc Vdc Vdc Adc Apk W W/C W C mJ TJ and Tstg EAS RqJC RqJA RqJA TL 1.0 62.5 50 260 C/W C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using the minimum recommended pad size. ORDERING INFORMATION Device NTP75N03L09 NTP75N03L09G NTB75N03L09 NTB75N03L09G NTB75N03L09T4 Package TO-220 TO-220 (Pb-Free) D2PAK D2PAK (Pb-Free) D2PAK Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 800 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTP75N03L09, NTB75N03L09 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain -Source Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 2) (VGS = 5.0 Vdc, ID = 37.5 Adc) Static Drain-to-Source On Resistance (Note 2) (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 37.5 Adc, TJ = 125C) Forward Transconductance (Notes 2 & 4) DYNAMIC CHARACTERISTICS (Note 4) Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 3 & 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VGS = 5.0 Vdc, ID = 75 Adc, Adc VDS = 24 Vdc) (Note 2) (VGS = 5.0 Vdc, 5 0 Vdc VDD = 20 Vdc, ID = 75 Adc, RG = 4.7 W) ( ) (Note 2) ) td(on) tr td(off) tf QT Q1 Q2 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 75 Adc, VGS = 0 Vdc) (IS = 75 Adc, VGS = 0 Vdc, TJ = 125C) (Note 2) (IS = 75 Adc, VGS = 0 Vdc Adc dlS/dt = 100 A/ms) (Note 2) VSD - - - - - - 1.19 1.09 37 20 17 0.023 1.25 - - - - - mC Vdc - - - - - - - 16 130 65 105 57 11 34 30 200 110 175 75 15 50 nC ns (VDS = 25 Vdc, VGS = 0 Vdc 0, f = 1.0 MHz) Ciss Coss Crss - - - 4398 1160 317 5635 1894 430 pF (VDS = 3 Vdc, ID = 20 Adc) VGS(th) 1.0 - RDS(on) - VDS(on) - - gFS - 0.52 0.35 58 0.68 0.50 - mW 6.5 8.0 Vdc 1.6 -6 2.0 - Vdc mVC mW (VGS = 20 Vdc, VDS = 0 Vdc) V(BR)DSS 30 IDSS - - IGSS - - - - 1.0 10 100 nAdc 34 -57 - - Vdc mVC mAdc Symbol Min Typ Max Unit Reverse Recovery Time (Note 4) Reverse Recovery Stored Charge (Note 4) trr ta tb QRR ns 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. 4. From characterization test data. http://onsemi.com 3 NTP75N03L09, NTB75N03L09 120 ID, DRAIN CURRENT (AMPS) 150 VGS = 3.5 V ID, DRAIN CURRENT (AMPS) 135 120 105 90 75 60 45 30 15 0 0.5 1 1.5 TJ = 25C TJ = 100C TJ = -55C 2.5 3 3.5 4 VDS 10 V VGS = 4 V VGS = 4.5 V 90 60 VGS = 5 V VGS = 6 V VGS = 8 V VGS = 10 V VGS = 3 V 30 TJ = 25C VGS = 2.5 V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.0085 0.008 0.0075 0.007 0.0065 0.006 0.0055 0.005 0.0045 0.004 10 20 30 40 50 60 70 80 90 100 120 ID, DRAIN CURRENT (AMPS) TJ = -55C TJ = 25C VGS = 5 V TJ = 100C RDS(on), DRAIN-TO SOURCE RESISTANCE (W) 0.009 TJ = 25C 0.008 0.007 VGS = 5 V 0.006 VGS = 10 V 0.005 0.004 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance vs. Drain Current and Temperature 1.6 VGS = 5.0 V ID = 37.5 A 1.4 IDSS, LEAKAGE (nA) 100 1000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 125C 1.2 TJ = 100C 10 1 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTP75N03L09, NTB75N03L09 12000 VGS VDS 10000 C, CAPACITANCE (pF) 8000 6000 4000 Coss 2000 Crss 0 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 22 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 V VGS = 0 V TJ = 25C 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 30 8 VGS 6 VDS QT 4 Q1 Q2 10 2 Q3 0 10 20 30 40 50 Qg, TOTAL GATE CHARGE (nC) 0 60 ID = 75 A TJ = 25C 20 Ciss 0 Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 tr IS, SOURCE CURRENT (AMPS) tf 100 td(off) td(on) TJ = 25C ID = 75 A 1 2.2 4.7 6.2 9.1 VDD = 15 V VGS = 5 V 10 20 10 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0.0 VGS = 0 V TJ = 25C t, TIME (ns) 0.2 0.4 0.6 0.8 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1600 1400 1200 1000 800 600 400 200 0 25 50 75 100 Figure 10. Diode Forward Voltage vs. Current ID = 75 A 125 150 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTP75N03L09, NTB75N03L09 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 NTP75N03L09, NTB75N03L09 PACKAGE DIMENSIONS D2PAK CASE 418AA-01 ISSUE O C E -B- 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.036 0.045 0.055 0.310 --- 0.100 BSC 0.018 0.025 0.090 0.110 0.280 --- 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.92 1.14 1.40 7.87 --- 2.54 BSC 0.46 0.64 2.29 2.79 7.11 --- 14.60 15.88 1.14 1.40 V W A 1 2 3 S -T- SEATING PLANE K G D 3 PL M W J DIM A B C D E F G J K M S V 0.13 (0.005) TB M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTP75N03L09, NTB75N03L09 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTP75N03L09/D |
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